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With a direct bandgap at the monolayer scale, MoS₂ enables ultra-thin transistors that combine high on/off ratios, excellent electrostatic control, and low power consumption. Its stability and scalability make it a leading candidate for advanced nanoelectronic applications beyond traditional silicon.

With a direct bandgap at the monolayer scale, MoS₂ enables ultra-thin transistors that combine high on/off ratios, excellent electrostatic control, and low power consumption. Its stability and scalability make it a leading candidate for advanced nanoelectronic applications beyond traditional silicon.

Unlike MoS₂’s primarily n-type behavior, WSe₂ supports ambipolar transport with a tunable bandgap — ideal for flexible, low-power devices that require both p- and n-type conduction.

Unlike MoS₂’s primarily n-type behavior, WSe₂ supports ambipolar transport with a tunable bandgap — ideal for flexible, low-power devices that require both p- and n-type conduction.